Charge tunable ErAs islands for backgate isolation in AlGaAs heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1566793
Reference7 articles.
1. New MBE buffer used to eliminate backgating in GaAs MESFETs
2. Study of electron traps in semi‐insulating gallium‐arsenide buffer layers for the suppression of backgating by the zero‐bias thermally stimulated current technique
3. Self-assembled ErAs islands in GaAs: Growth and subpicosecond carrier dynamics
4. Fluctuation Controlled Hopping of Bound Magnetic Polarons in ErAs:GaAs Nanocomposites
5. The Effects of Ion Beam Etching on Si, Ge, GaAs , and InP Schottky Barrier Diodes
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