Impact of cyclic plasma treatment on oxygen vacancy defects in TiN/HfZrO/SiON/Si gate stacks
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4921307
Reference30 articles.
1. Multideposition Multiroom-Temperature Annealing via Ultraviolet Ozone for HfZrO High- $\kappa$ and Integration With a TiN Metal Gate in a Gate-Last Process
2. Thermal Stability Improvement via Cyclic D[sub 2]O Radical Anneal Interposed in Atomic Layer Deposition Process
3. Reliability Characteristics of D2O-Radical Annealed ALD HfO2 Dielectric
4. Scaling to Sub-1 nm Equivalent Oxide Thickness with Hafnium Oxide Deposited by Atomic Layer Deposition
5. Physical and Electrical Effects of the Dep-Anneal-Dep-Anneal (DADA) Process for HfO2 in High K/Metal Gate Stacks
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