Large internal quantum efficiency of In-free UV-emitting GaN∕AlGaN quantum-well structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2202109
Reference15 articles.
1. 250nmAlGaN light-emitting diodes
2. Watt-Class High-Output-Power 365 nm Ultraviolet Light-Emitting Diodes
3. High-Efficiency 352 nm Quaternary InAlGaN-Based Ultraviolet Light-Emitting Diodes Grown on GaN Substrates
4. Continuous Wave Milliwatt Power AlGaN Light Emitting Diodes at 280 nm
5. High‐power InGaN single‐quantum‐well‐structure blue and violet light‐emitting diodes
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1. Studies on Carrier Recombination in GaN/AlN Quantum Dots in Nanowires with a Core–Shell Structure;Nanomaterials;2020-11-20
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3. Consistency on Two Kinds of Localized Centers Examined from Temperature-Dependent and Time-Resolved Photoluminescence in InGaN/GaN Multiple Quantum Wells;ACS Photonics;2017-08-08
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