Oxide thickness dependence of electron‐induced surface states in MOS structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.88308
Reference12 articles.
1. THE EFFECT OF LOW‐ENERGY ELECTRON IRRADIATION OF METAL‐OXIDE‐SEMICONDUCTOR STRUCTURES
2. Radiation-Induced Perturbations of the Electrical Properties of the Silicon-Silicon Dioxide Interface
3. Investigation of Radiation-Induced Interface States Utilizing Gated-Bipolar and MOS Structures
4. Low energy electron irradiation of the Si-SiO2 interface
5. Comparison of interface‐state generation by 25‐keV electron beam irradiation inp‐type andn‐type MOS capacitors
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