Defect formation and annealing behaviors of fluorine-implanted GaN layers revealed by positron annihilation spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3081019
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5. Fluorine in Silicon: Diffusion, Trapping, and Precipitation
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