Comparison of the optical gain of InGaAsN quantum-well lasers with GaAs or GaAsP barriers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Reference20 articles.
1. Band Anticrossing in GaInNAs Alloys
2. Spatial Correlations in GaInAsN Alloys and their Effects on Band-Gap Enhancement and Electron Localization
3. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
4. Gain spectra of (GaIn)(NAs) laser diodes for the 1.3-μm-wavelength regime
5. Experimental evidence of carrier leakage in InGaAsN quantum-well lasers
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2. Optical Gain in Type-II InAsN/GaSb Strained Quantum Wells Laser Diodes and Its Pressure Dependence;IEEE Journal of Quantum Electronics;2017
3. Band Structure, Optical Transition, and Optical Gain of Type-II InAs(N)/GaSb Quantum Wells Laser Diodes Modeled Within 16-Band and 14-Band $kp$ Model;IEEE Journal of Quantum Electronics;2015-05
4. III-V Compound Semiconductor Optoelectronic Devices;Wiley Encyclopedia of Electrical and Electronics Engineering;2014-12-15
5. Carrier Recombination Dynamics Investigations of Strain-Compensated InGaAsN Quantum Wells;IEEE Photonics Journal;2012-12
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