Effect of spacer layer thickness on the static characteristics of resonant tunneling diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103398
Reference7 articles.
1. Oscillations up to 420 GHz in GaAs/AlAs resonant tunneling diodes
2. Quantum functional devices: resonant-tunneling transistors, circuits with reduced complexity, and multiple valued logic
3. Power and stability limitations of resonant tunneling diodes
4. A proposed narrow-band-gap base transistor structure
5. Effect of Silicon Doping Profile on I-V Characteristics of an AlGaAs/GaAs Resonant Tunneling Barrier Structure Grown by MBE
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1. Influence of Asymmetric Spacer Layers on Resonant Tunneling Diodes;Springer Proceedings in Physics;2024
2. Experimental and Theoretical Investigation of Collector Spacer and Doping Profile on Triple‐Barrier Resonant Tunneling Diodes;physica status solidi (a);2023-11-03
3. GaAs-based resonant tunneling diode: Device aspects from design, manufacturing, characterization and applications;Journal of Semiconductors;2023-10-01
4. Research of resonant-tunneling diodes’ spacer layers’ thickness impact on their functional parameters and functional parameters of balanced frequency mixer based on these diodes;2022 International Conference on Information, Control, and Communication Technologies (ICCT);2022-10-03
5. Analytical Physics-Based Compact Current–Voltage Model for 2D-2D Resonant Tunneling Diodes;IEEE Transactions on Nanotechnology;2022
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