1.54 μm wavelength emission of highly Er‐doped CaF2layers grown by molecular‐beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357140
Reference9 articles.
1. Optimal growth conditions for molecular‐beam epitaxy of Nd3+doped CaF2
2. Molecular beam epitaxy of Nd‐doped CaF2and CaSrF2layers on Si and GaAs substrates
3. Er3+doping of CaF2layers grown by molecular beam epitaxy
4. Effect of growth temperature and doping concentration on the distribution of the emitting centers in CaF2:Er molecular beam epitaxial layers
5. Selective laser excitation of charge compensated sites in CaF2:Er3+
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