Effect of growth temperature and doping concentration on the distribution of the emitting centers in CaF2:Er molecular beam epitaxial layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356211
Reference9 articles.
1. Selective laser excitation of charge compensated sites in CaF2:Er3+
2. Er3+doping of CaF2layers grown by molecular beam epitaxy
3. Molecular‐beam epitaxy and optical characterization of GaAs on CaF2substrates
4. An epitaxial Si/insulator/Si structure prepared by vacuum deposition of CaF2 and silicon
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