Contactless electroreflectance of InAs∕In0.53Ga0.23Al0.24As quantum dashes grown on InP substrate: Analysis of the wetting layer transition-Reference-Cited by-同舟云学术

Contactless electroreflectance of InAs∕In0.53Ga0.23Al0.24As quantum dashes grown on InP substrate: Analysis of the wetting layer transition

Published:2007-01 Issue:1 Volume:101 Page:013507
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kudrawiec R.,Motyka M.,Misiewicz J.,Somers A.,Schwertberger R.,Reithmaier J. P.,Forchel A.,Sauerwald A.,Kümmell T.,Bacher G.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2405233

Reference33 articles.

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2. Novel contactless mode of electroreflectance

3. Contactless electromodulation and surface photovoltage spectroscopy for the nondestructive, room temperature characterization of wafer-scale III–V semiconductor device structures

4. Interference effects in electromodulation spectroscopy applied to GaAs-based structures: A comparison of photoreflectance and contactless electroreflectance

5. Room temperature contactless electroreflectance characterization of InGaAs/InAs/GaAs quantum dot wafers

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2. Carrier relaxation bottleneck in type-II InAs/InGaAlAs/InP(001) coupled quantum dots-quantum well structure emitting at 1.55 μm;Applied Physics Letters;2018-05-28

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