Room temperature contactless electroreflectance characterization of InGaAs/InAs/GaAs quantum dot wafers-Reference-Cited by-同舟云学术

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Room temperature contactless electroreflectance characterization of InGaAs/InAs/GaAs quantum dot wafers

Published:2006-08-18 Issue:10 Volume:21 Page:1402-1407
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Motyka M,Kudrawiec R,Sęk G,Misiewicz J,Krestnikov I L,Mikhrin S,Kovsh A

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Gain and the threshold of three-dimensional quantum-box lasers

2. Comparison of the carrier induced refractive index, gain, and linewidth enhancement factor in quantum dot and quantum well lasers

3. Photoreflectance spectroscopy of vertically coupled InGaAs/GaAs double quantum dots

4. Contactless electroreflectance study of a vertically coupled quantum dot-based InAs/GaAs laser structure

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photoacoustic spectroscopy of absorption edge for GaAsBi/GaAs nanowires grown on Si substrate;Applied Physics Letters;2016-10-31

2. Temperature-dependent modulated reflectance and photoluminescence of InAs–GaAs and InAs–InGaAs–GaAs quantum dot heterostructures;Optical and Quantum Electronics;2016-02-20

3. Submonolayer Uniformity of Type II InAs/GaInSb W-shaped Quantum Wells Probed by Full-Wafer Photoluminescence Mapping in the Mid-infrared Spectral Range;Nanoscale Research Letters;2015-10-15

4. Temperature-dependent modulated reflectance of InAs/InGaAs/GaAs quantum dots-in-a-well infrared photodetectors;Journal of Applied Physics;2015-04-14

5. Contactless electroreflectance spectroscopy of optical transitions in low dimensional semiconductor structures;Opto-Electronics Review;2012-01-01

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