Ultrafast carrier recombination in highly n-doped Ge-on-Si films-Reference-Cited by-同舟云学术

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Ultrafast carrier recombination in highly n-doped Ge-on-Si films

Published:2019-06-17 Issue:24 Volume:114 Page:241104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Allerbeck J.¹^ORCID,Herbst A. J.¹,Yamamoto Y.²,Capellini G.²³^ORCID,Virgilio M.⁴^ORCID,Brida D.¹⁵^ORCID

Affiliation:

1. Department of Physics, University of Konstanz, D-78457 Konstanz, Germany

2. IHP—Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany

3. Dipartimento di Scienze, Università di Roma Tre, V.le G Marconi 446, I-00146 Roma, Italy

4. Dipartimento di Fisica “E. Fermi,” Università di Pisa, Largo Pontecorvo 3, I-56127 Pisa, Italy

5. Physics and Materials Science Research Unit, University of Luxembourg, 162a avenue de la Faïencerie, L-1511 Luxembourg, Luxembourg

Funder

Deutsche Forschungsgemeinschaft

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5088012

Reference37 articles.

1. Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si

2. Direct-gap optical gain of Ge on Si at room temperature

3. Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes

4. Direct gap photoluminescence of n-type tensile-strained Ge-on-Si

5. Ge-on-Si laser operating at room temperature

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1. Colloidal‐Doped Semiconductor Nanocrystals Embedded in One‐Dimensional Photonic Crystals for Ultrafast Photonics;physica status solidi (RRL) – Rapid Research Letters;2024-03-03

2. Sub-three-cycle pulses at 2 µm from a degenerate optical parametric amplifier;Optics Letters;2022-03-16

3. High carrier lifetimes in epitaxial germanium–tin/Al(In)As heterostructures with variable tin compositions;Journal of Materials Chemistry C;2022

4. Influence of the Growth Conditions and Doping Level on the Luminescence Kinetics of Ge:Sb Layers Grown on Silicon;Semiconductors;2020-06-30

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