Effect of ion induced damage on carrier lifetimes in strained CdZnSe/ZnSe quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.372300
Reference11 articles.
1. Damage induced by plasma etching: On the correlation of results from photoluminescence and transport characterization techniques
2. Sidewall damage inn+‐GaAs quantum wires from reactive ion etching
3. Comparison of the damage and contamination produced by CF4and CF4/H2reactive ion etching: The role of hydrogen
4. Deep Etched ZnSe-Based Nanostructures for Future Optoelectronic Applications
5. Nanometer fabrication techniques for wide-gap II-VI semiconductors and their optical characterization
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1. Investigation of structural, mechanical and optoelectronic properties of cubic Cd1−x−yZnxHgySe quaternary alloys through first-principle calculations;Bulletin of Materials Science;2022-02-10
2. Optical Characterization of ZnSe-Based Quantum Structures Fabricated by CH4/H2 Reactive Ion Etching;physica status solidi (b);2002-01
3. SURFACE AND INTERFACIAL RECOMBINATION IN SEMICONDUCTORS;Handbook of Surfaces and Interfaces of Materials;2001
4. Optical Evaluation of ZnSe-based Quantum Structures Fabricated by CH4/H2 Reactive Ion Etching.;Hyomen Kagaku;2001
5. (Cd,Zn)Se quantum wells;Landolt-Börnstein - Group III Condensed Matter
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