Effects of the oxygen precursor on the interface between (100)Si and HfO2 films grown by atomic layer deposition-Reference-Cited by-同舟云学术

Effects of the oxygen precursor on the interface between (100)Si and HfO2 films grown by atomic layer deposition

Published:2007-10-22 Issue:17 Volume:91 Page:172905
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Baldovino S.,Spiga S.,Scarel G.,Fanciulli M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2802040

Reference17 articles.

1. Investigation of point defects at the high-k oxides/Si(100) interface by electrically detected magnetic resonance

2. Spin-Dependent Recombination on Silicon Surface

3. Spin-dependent processes in amorphous and microcrystalline silicon: a survey

4. M. Fanciulli, O. Costa, S. Baldovino, S. Cocco, G. Seguini, E. Prati, and G. Scarel in Defects in High-κ Gate Dielectric Stacks, NATO Advanced Studies Institute, Series II: Mathematics, Physics and Chemistry (Plenum, New York, 2005), Vol. 220, p. 26.

5. Si dangling-bond-type defects at the interface of (100)Si with ultrathin layers of SiOx, Al2O3, and ZrO2

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