In situ study of the atomic layer deposition of HfO2 on Si
Author:
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://avs.scitation.org/doi/pdf/10.1116/1.3668080
Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Combination of Multiple Operando and In-Situ Characterization Techniques in a Single Cluster System for Atomic Layer Deposition: Unraveling the Early Stages of Growth of Ultrathin Al2O3 Films on Metallic Ti Substrates;Inorganics;2023-12-14
2. Uniformity of HfO2 Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition;Nanomaterials;2022-12-29
3. Interface engineering of β-Ga2O3 MOS-type Schottky barrier diode using an ultrathin HfO2 interlayer;Surfaces and Interfaces;2022-10
4. Ambient pressure x-ray photoelectron spectroscopy setup for synchrotron-based in situ and operando atomic layer deposition research;Review of Scientific Instruments;2022-01-01
5. Effect of atomic-layer-deposited HfO2 thin-film interfacial layer on the electrical properties of Au/Ti/n-GaAs Schottky diode;Journal of Materials Science: Materials in Electronics;2021-03-26
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