Direct measurement of strain in a Ge island on Si(001)-Reference-Cited by-同舟云学术

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Direct measurement of strain in a Ge island on Si(001)

Published:1999-07-05 Issue:1 Volume:75 Page:46-48
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Miller Peter D.,Liu Chuan-Pu,Henstrom William L.,Gibson J. Murray,Huang Y.,Zhang P.,Kamins T. I.,Basile D. P.,Williams R. Stanley

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.124272

Reference15 articles.

1. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)

2. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)

3. Evolution of Ge islands on Si(001) during annealing

4. Shape Transition of Germanium Nanocrystals on a Silicon (001) Surface from Pyramids to Domes

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1. Self-Assembly in Semiconductor Epitaxy;Handbook of Crystal Growth;2015

2. Elastic fields and physical properties of surface quantum dots;Physics of the Solid State;2011-10

3. Strain and Intermixing in Single Ge∕Si Quantum Dots Observed by Tip-enhanced Raman Spectroscopy;AIP Conference Proceedings;2011

4. On strain state and pseudo-moiré TEM contrast of InSb quantum dots coherently grown on InAs surface;physica status solidi (a);2010-06-29

5. Formation of coherent Ge shallow dome islands on Si(001) by ultra-high-vacuum ion beam sputter deposition;Applied Physics A;2008-02-16

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