Profile simulation model for sub-50 nm cryogenic etching of silicon using SF6/O2 inductively coupled plasma-Reference-Cited by-同舟云学术

Profile simulation model for sub-50 nm cryogenic etching of silicon using SF6/O2 inductively coupled plasma

Published:2015-08-05 Issue:5 Volume:118 Page:053302
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Ishchuk Valentyn¹²^ORCID,Olynick Deirdre L.²,Liu Zuwei²³,Rangelow Ivo W.¹

Affiliation:

1. Department of Micro- and Nanoelectronic Systems, Institute of Micro and Nanoelectronics, Faculty of Electrical Engineering and Information Technology, Ilmenau University of Technology, Gustav-Kirchhoff-Straße 1, Ilmenau 98693, Germany

2. Molecular Foundry, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, USA

3. Oxford Instruments, 300 Baker Avenue, Suite 150, Concord, Massachusetts 01742, USA

Funder

Oxford Instruments

Seventh Framework Programme (European Union Seventh Framework Programme)

U.S. Department of Energy (Department of Energy)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4927731

Reference55 articles.

1. Low‐temperature reactive ion etching and microwave plasma etching of silicon

2. Plasma cryogenic etching of silicon: from the early days to today's advanced technologies

3. Critical tasks in high aspect ratio silicon dry etching for microelectromechanical systems

4. Reactive ion etching for microelectrical mechanical system fabrication

5. Plasma etching: Yesterday, today, and tomorrow

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