Investigation of the formation of the 2.8 eV luminescence band in p-type GaN:Mg
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126562
Reference11 articles.
1. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
2. Hole Compensation Mechanism of P-Type GaN Films
3. GaN: Processing, defects, and devices
4. Atomic geometry and electronic structure of native defects in GaN
5. Interactions of hydrogen with native defects in GaN
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