Highly Conductive and 260 nm Transparent p-Type Al0.6Ga0.4N Achieved Utilizing Interface Doping Effects-Reference-Cited by-同舟云学术

Highly Conductive and 260 nm Transparent p-Type Al0.6Ga0.4N Achieved Utilizing Interface Doping Effects

Published:2021-03-22 Issue:4 Volume:21 Page:2389-2397
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Qiu Xinjia¹^ORCID,Jiang Hao¹

Affiliation:

1. State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Guangdong Province

Key Realm R&D Program of Guangzhou

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.1c00020

Reference42 articles.

1. 4.5 mW operation of AlGaN-based 267 nm deep-ultraviolet light-emitting diodes

2. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

3. 231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire

4. AlGaN solar-blind avalanche photodiodes with high multiplication gain

5. High p-type conduction in high-Al content Mg-doped AlGaN

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