1.55μm GaAs∕GaNAsSb∕GaAs optical waveguides grown by radio frequency nitrogen plasma-assisted molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2898507
Reference16 articles.
1. Low-loss optical waveguides in MBE-grown GaAs/GaAlAs heterostructures
2. Low loss GaAs optical waveguides
3. Low loss GaAs optical waveguides grown by the metalorganic chemical vapor deposition method
4. Low‐loss single‐mode GaAs/AlGaAs optical waveguides grown by organometallic vapor phase epitaxy
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Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High-Performance GaNAsSb/GaAs 1.55-$\mu\hbox{m}$ Waveguide Photodetector;IEEE Transactions on Electron Devices;2011-03
2. Design Considerations for 1.3 $\mu$m GaNAsSb–GaAs High Speed and High Quantum Efficiency Waveguide Photodetectors;Journal of Lightwave Technology;2009-07
3. GaNAsSb material for ultrafast microwave photoconductive switching application;Applied Physics Letters;2008-08-11
4. High responsivity GaNAsSb p-i-n photodetectors at 13µm grown by radio-frequency nitrogen plasma-assisted molecular beam epitaxy;Optics Express;2008-05-14
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