GaNAsSb material for ultrafast microwave photoconductive switching application-Reference-Cited by-同舟云学术

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GaNAsSb material for ultrafast microwave photoconductive switching application

Published:2008-08-11 Issue:6 Volume:93 Page:063509
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tan K. H.,Yoon S. F.,Tripon-Canseliet C.,Loke W. K.,Wicaksono S.,Faci S.,Saadsaoud N.,Lampin J. F.,Decoster D.,Chazelas J.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2971204

Reference20 articles.

1. Cherenkov Radiation from Femtosecond Optical Pulses in Electro-Optic Media

2. Picosecond GaAs‐based photoconductive optoelectronic detectors

3. Formation of As precipitates in GaAs by ion implantation and thermal annealing

4. Picosecond carrier lifetime in GaAs implanted with high doses of As ions: An alternative material to low‐temperature GaAs for optoelectronic applications

5. LT-GaAs detector with 451 fs response at 1.55 [micro sign]m via two-photon absorption

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Doping effects on the composition, electric and optical properties of MBE-grown 1.1 eV GaNAsSb layers;Semiconductor Science and Technology;2020-10-06

2. High Electrical Resistivity $1.55~\mu$ m Photoconductive Switch Using a Barrier Structure;IEEE Photonics Technology Letters;2019-10-15

3. Photonic devices based on black phosphorus and related hybrid materials;RIV NUOVO CIMENTO;2016

4. Study of a 1 eV GaNAsSb photovoltaic cell grown on a silicon substrate;Applied Physics Letters;2014-03-10

5. Low temperature grown GaNAsSb: A promising material for photoconductive switch application;Applied Physics Letters;2013-09-09

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