High-pressure high-temperature annealing of ion-implanted GaN films monitored by visible and ultraviolet micro-Raman scattering
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.372248
Reference22 articles.
1. Gain characteristics of InGaN/GaN quantum well diode lasers
2. Gain characteristics of InGaN/GaN quantum well diode lasers
3. Reliability of GaN Metal Semiconductor Field-Effect Transistor at High Temperature
4. Electrical and structural analysis of high-dose Si implantation in GaN
5. Annealing of ion implanted gallium nitride
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2. Depth profiling of E C – 0.26 eV electron traps introduced in homoepitaxial n-type GaN by ultra-low-dose Si-ion implantation and subsequent annealing;Applied Physics Express;2022-11-30
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4. Process Optimization for Selective Area Doping of GaN by Ion Implantation;Journal of Electronic Materials;2021-05-28
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