Red Photoluminescent Efficiency and Minority‐Carrier Lifetime of GaP(Zn,O) Pulled from Nonstoichiometric Melts
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1653744
Reference10 articles.
1. P‐N JUNCTIONS IN GaP WITH EXTERNAL ELECTROLUMINESCENCE EFFICIENCY ∼2% AT 25°C
2. GaP RED ELECTROLUMINESCENT DIODES WITH AN EXTERNAL QUANTUM EFFICIENCY OF 7%
3. Properties of GaP Single Crystals Grown by Liquid Encapsulated Pulling
4. HIGH‐EFFICIENCY RED‐EMITTING GaP DIODES GROWN BY SINGLE EPITAXY ON SOLUTION‐GROWN (η≃6%) AND CZOCHRALSKI (η≃2%) SUBSTRATES
5. Luminescence and Minority Carrier Recombination inp-Type GaP(Zn,O)
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1. Effects of stoichiometry on deep levels in MOVPE GaP;Semiconductor Science and Technology;1988-05-01
2. Point Defect Thermodynamics of Compound Semiconductors and their Alloys;MRS Proceedings;1982
3. Strahlende und nichtstrahlende Rekombination in Halbleitern;Optoelektronik I;1981
4. Defects in III-V Semiconductors Studied Through EPR;MRS Proceedings;1980
5. Low temperature growth of GaP LPE layers from indium solvent;Journal of Crystal Growth;1979-05
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