Effective g factor of 2D holes in strained Ge quantum wells-Reference-Cited by-同舟云学术

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Effective g factor of 2D holes in strained Ge quantum wells

Published:2018-04-28 Issue:16 Volume:123 Page:165703
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Drichko I. L.¹,Dmitriev A. A.¹²,Malysh V. A.¹,Smirnov I. Yu.¹,von Känel H.³,Kummer M.³,Chrastina D.⁴,Isella G.⁴^ORCID

Affiliation:

1. Ioffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia

2. Department of Nanophotonics and Metamaterials, ITMO University, 49 Kronverksky Pr., 197101 St. Petersburg, Russia

3. Laboratory for Solid State Physics, ETH Zurich, Otto-Stern-Weg 1, CH-8093 Zurich, Switzerland

4. INFM and L-NESS Dipartimento di Fisica, Politecnico di Milano, Polo Regionale di Como, Via Anzani 52, I-22100 Como, Italy

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5025413

Reference16 articles.

1. Spinless composite fermions in an ultrahigh-quality strained Ge quantum well

2. Fractional Quantum Hall States in a Ge Quantum Well

3. Hole density dependence of effective mass, mobility and transport time in strained Ge channel modulation-doped heterostructures

4. Effective mass measurement: the influence of hole band nonparabolicity in SiGe/Ge quantum wells

5. Nonmonotonic temperature dependence of the resistivity of p-Ge/Ge1−xSix in the region of the metal–insulator transition

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1. Light-hole spin confined in germanium;Physical Review B;2024-07-03

2. Recent progress in undoped group-IV heterostructures for quantum technologies;Materials for Quantum Technology;2024-02-26

3. Quantum transport quality of a processed undoped Ge/SiGe heterostructure;Physical Review B;2023-07-07

4. Planar Josephson junctions in germanium: Effect of cubic spin-orbit interaction;Physical Review B;2023-01-27

5. A Multiscale Simulation Approach for Germanium-Hole-Based Quantum Processor;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;2023-01

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