All-metallic electrically gated 2H-TaSe2 thin-film switches and logic circuits-Reference-Cited by-同舟云学术

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All-metallic electrically gated 2H-TaSe2 thin-film switches and logic circuits

Published:2014-01-21 Issue:3 Volume:115 Page:034305
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Renteria J.,Samnakay R.,Jiang C.,Pope T. R.,Goli P.,Yan Z.,Wickramaratne D.,Salguero T. T.,Khitun A. G.,Lake R. K.,Balandin A. A.

Funder

NSF

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4862336

Reference42 articles.

1. Possible performance of capacitively coupled single‐electron transistors in digital circuits

2. A model of a metallic quantum nanotransistor with a Coulomb-blockage gate in “magic” Au55 and Ag55 nanocrystals with speed of 1011 Hz

3. Metallic single-electron transistor without traditional tunnel barriers

4. All-Metallic High-Performance Field Effect Transistor Based on Telescoping Carbon Nanotubes: An ab Initio Study

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4. The Influence of Dimensionality on the Charge‐Density‐Wave Transition and its Application on Mid‐Infrared Photodetection;Advanced Optical Materials;2023-05-02

5. Electrical Gating of the Charge-Density-Wave Phases in Two-Dimensional h-BN/1T-TaS₂ Devices;ACS Nano;2022-10-31

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