Controllable electronic properties, contact barriers and contact types in a TaSe<sub>2</sub>/WSe<sub>2</sub> metal–semiconductor heterostructure-Reference-Cited by-同舟云学术

Controllable electronic properties, contact barriers and contact types in a TaSe₂/WSe₂ metal–semiconductor heterostructure

Published:2024 Issue:12 Volume:26 Page:9657-9664
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Nguyen Son T.¹,Cuong Q. Nguyen²³^ORCID,N. Hieu Nguyen²³^ORCID,Phuc H. V.⁴^ORCID,Nguyen Ch. V.⁵^ORCID

Affiliation:

1. Faculty of Electrical Engineering, Hanoi University of Industry, Hanoi 100000, Vietnam

2. Institute of Research and Development, Duy Tan University, Da Nang 550000, Vietnam

3. Faculty of Natural Sciences, Duy Tan University, Da Nang 550000, Vietnam

4. Division of Physics, School of Education, Dong Thap University, Cao Lanh 870000, Vietnam

5. Department of Materials Science and Engineering, Le Quy Don Technical University, Hanoi 100000, Vietnam

Abstract

Herein, we design a metal–semiconductor heterostructure combining metallic TaSe2 and semiconducting WSe2 materials and investigate its atomic structure, electronic properties and controllable contact types using first-principles calculations.

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/CP/D4CP00122B

Reference54 articles.

1. Electronics based on two-dimensional materials

2. Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene

3. Two-dimensional materials for next-generation computing technologies

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5. Phosphorene: from theory to applications

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