Gate capacitance-voltage characteristics of submicron-long-gate diamond field-effect transistors with hydrogen surface termination
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2436649
Reference11 articles.
1. High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond
2. Electronic Devices on CVD Diamond
3. Diamond surface-channel FET structure with 200 V breakdown voltage
4. Enhancement/Depletion Surface Channel Field Effect Transistors of Diamond and Their Logic Circuits
5. Hydrogen “doped” thin film diamond field effect transistors for high power applications
Cited by 23 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Engineering the spin–orbit interaction in surface conducting diamond with a solid-state gate dielectric;Applied Physics Letters;2020-04-27
2. H-Terminated Diamond Surface Band Bending Characterization by Angle-Resolved XPS;Surfaces;2020-02-18
3. Characteristics of hydrogen-terminated single crystalline diamond field effect transistors with different surface orientations;Acta Physica Sinica;2020
4. Characterization and Modeling of Hydrogen-Terminated MOSFETs With Single-Crystal and Polycrystalline Diamond;IEEE Electron Device Letters;2018-11
5. Characterization of high-transconductance long-channel hydrogen-terminated polycrystal diamond field effect transistor;Acta Physica Sinica;2018
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3