InGaAs/InP superlattice waveguides by elevated temperature argon ion mixing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102150
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4. Implantation disordering of AlxGa1−xAs superlattices
5. Disordering of InGaAs‐InP quantum wells by Si implantation
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1. Ion-beam induced effects in multi-layered semiconductor systems;physica status solidi (b);2016-07-15
2. Temperature effects on the fabrication of optical channels in planar GaAs/AlGaAs waveguides using MeV ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1998-05
3. Effects of interdiffusion-induced strain in Ga/sub 0.51/In/sub 0.49/P-GaAs intermixed quantum wells;IEEE Journal of Selected Topics in Quantum Electronics;1998
4. Crystal Growth and Device Fabrication;Semiconductor Optical Modulators;1998
5. Isolation of a lattice-mismatched AlInAs/GaInAs layer on InP using ion implantation for high energy mobility transistor realization;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1997-07
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