Band gap engineering of SiCN film grown by pulsed laser deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1594267
Reference19 articles.
1. A silicoboron carbonitride ceramic stable to 2,000°C
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3. Silicoboron–carbonitride ceramics: A class of high-temperature, dopable electronic materials
4. Influence of deposition condition and hydrogen on amorphous-to-polycrystalline SiCN films
5. Deposition and optical studies of silicon carbide nitride thin films
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