Excess vacancy generation byE‐center dissociation in the case of phosphorus diffusion in silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.324016
Reference20 articles.
1. Detailed analysis of thin phosphorus-diffused layers in p-type silicon
2. Retardation of Diffusion by Diffusion-Induced Dislocation in Silicon
3. Diffusion of Group V Impurity in Silicon
4. CXXXIII. Impurity diffusion in crystals (mainly ionic crystals with the sodium chloride structure)
5. Donor Diffusion Dynamics in Silicon
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