Resistance transition assisted geometry enhanced magnetoresistance in semiconductors-Reference-Cited by-同舟云学术

Resistance transition assisted geometry enhanced magnetoresistance in semiconductors

Published:2015-05-07 Issue:17 Volume:117 Page:17A302
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Luo Zhaochu¹²,Zhang Xiaozhong¹²

Affiliation:

1. Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China

2. Beijing National Center for Electron Microscopy, Tsinghua University, Beijing 100084, People's Republic of China

Funder

the National Science Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4906766

Reference24 articles.

1. Classical and quantum routes to linear magnetoresistance

2. Enhanced Room-Temperature Geometric Magnetoresistance in Inhomogeneous Narrow-Gap Semiconductors

3. Hall effect enhanced low-field sensitivity in a three-contact extraordinary magnetoresistance sensor

4. Large Magnetoresistance of Electrodeposited Single-Crystal Bismuth Thin Films

5. Large magnetoresistance in non-magnetic silver chalcogenides

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