Optical properties of ternary and quaternary IV–VI semiconductor layers on (100) BaF2 substrates

Author:

McCann Patrick J.,Li Lin,Furneaux John E.,Wright Robert

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference16 articles.

Cited by 21 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Growth of the BaF2/CaF2/A12O3 Structures for the Radiation-Resistant Photodetectors for Infrared Range;2023 IEEE 24th International Conference of Young Professionals in Electron Devices and Materials (EDM);2023-06-29

2. Materials and device designs for thermophotovoltaic power conversion;Energy Science & Engineering;2023-05-09

3. Molecular beam epitaxy of BaF2/CaF2 buffer layers on the Si(100) substrate for monolithic photoreceivers;Optoelectronics, Instrumentation and Data Processing;2017-05

4. Study of the features of BaF2 heteroepitaxy on CaF2/Si(100) layers obtained in the high-temperature growth mode;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2017-01

5. Refractive indices of semiconductors from energy gaps;Optical Materials;2015-08

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