Metal/III-V Schottky barrier height tuning for the design of nonalloyed III-V field-effect transistor source/drain contacts
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3327434
Reference21 articles.
Cited by 72 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
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2. Schottky barrier height and contact resistivity reduction of metal/GaOx/n-GaN structure;2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM);2023-05
3. Monolayer MoS2-based transistors with low contact resistance by inserting ultrathin Al2O3 interfacial layer;Science China Technological Sciences;2023-04-24
4. Effects of Oxide Species on the Reduction of Contact Resistivity of Al/oxide/n-GaN MIS Devices;2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2023-03-07
5. 4H-SiC Ohmic contacts formation by MoS2 layer intercalation: A first-principles study;Journal of Applied Physics;2022-12-28
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