Nanometer-scale order in amorphous Ge2Sb2Te5 analyzed by fluctuation electron microscopy-Reference-Cited by-同舟云学术

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Nanometer-scale order in amorphous Ge2Sb2Te5 analyzed by fluctuation electron microscopy

Published:2007-01-08 Issue:2 Volume:90 Page:021923
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kwon Min-Ho,Lee Bong-Sub,Bogle Stephanie N.,Nittala Lakshmi N.,Bishop Stephen G.,Abelson John R.,Raoux Simone,Cheong Byung-ki,Kim Ki-Bum

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2430067

Reference21 articles.

1. M. Wuttig, in Nanoelectronics and Information Technology, edited by R. Waser (Wiley, Weinheim, 2005), 2nd ed., p. 645.

2. Towards a universal memory?

3. Laser induced crystallization of amorphous Ge2Sb2Te5 films

4. Laser‐induced crystallization phenomena in GeTe‐based alloys. I. Characterization of nucleation and growth

5. Characterization of Amorphous Phases of Ge2Sb2Te5Phase-Change Optical Recording Material on Their Crystallization Behavior

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