Nanoscale Chemical Heterogeneity Ensures Unprecedently Low Resistance Drift in Cache-Type Phase-Change Memory Materials-Reference-Cited by-同舟云学术

Nanoscale Chemical Heterogeneity Ensures Unprecedently Low Resistance Drift in Cache-Type Phase-Change Memory Materials

Published:2023-03-02 Issue:6 Volume:23 Page:2362-2369
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Huang Jiaen¹,Chen Bin¹²^ORCID,Sha Gang³,Gong Huang¹⁴,Song Tao¹,Ding Keyuan¹²,Rao Feng¹²^ORCID

Affiliation:

1. College of Materials Science and Engineering, Shenzhen University, Shenzhen 518071, China

2. Shenzhen Key Laboratory of New Information Display and Storage Materials, Shenzhen University, Shenzhen 518071, China

3. Chinese Center of Excellence for Atom Probe Tomography, Herbert Gleiter Institute of Nanoscience, Nanjing University of Science and Technology, Nanjing 210094, China

4. College of Mathematics and statistics, Shenzhen University, Shenzhen 518071, China

Funder

Science and Technology Foundation of Shenzhen City

National Natural Science Foundation of China

Basic and Applied Basic Research Foundation of Guangdong

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.3c00262

Reference43 articles.

1. All-optical spiking neurosynaptic networks with self-learning capabilities

2. Stochastic phase-change neurons

3. Memristive crossbar arrays for brain-inspired computing

4. In-memory computing with resistive switching devices

5. Tutorial: Brain-inspired computing using phase-change memory devices

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