Characterizations of nonlinear optical properties on GaN crystals in polar, nonpolar, and semipolar orientations
Author:
Affiliation:
1. School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4983026
Reference29 articles.
1. High-Power Blue-Violet Semipolar ($20\bar{2}\bar{1}$) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm$^{2}$
2. Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells
3. Study of Low-Efficiency Droop in Semipolar ( $20\bar{2}\bar{1}$ ) InGaN Light-Emitting Diodes by Time-Resolved Photoluminescence
4. Analysis of loss mechanisms in InGaN solar cells using a semi-analytical model
5. Optical properties of highly polarized InGaN light-emitting diodes modified by plasmonic metallic grating
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