Hopping conduction distance dependent activation energy characteristics of Zn:SiO2 resistance random access memory devices-Reference-Cited by-同舟云学术

Hopping conduction distance dependent activation energy characteristics of Zn:SiO2 resistance random access memory devices

Published:2013-04 Issue:13 Volume:102 Page:133503
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chen Kai-Huang,Zhang Rui,Chang Ting-Chang,Tsai Tsung-Ming,Chang Kuan-Chang,Lou J. C.,Young Tai-Fa,Chen Jung-Hui,Shih Chih-Cheng,Tung Cheng-Wei,Syu Yong-En,Sze Simon M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4799655

Reference29 articles.

1. Improvement of Resistive Switching Properties in $ \hbox{ZrO}_{2}$-Based ReRAM With Implanted Ti Ions

2. Developments in nanocrystal memory

3. Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure

4. Investigation of resistive switching in Cu-doped HfO2thin film for multilevel non-volatile memory applications

5. Resistive Switching Properties of $\hbox{Au}/ \hbox{ZrO}_{2}/\hbox{Ag}$ Structure for Low-Voltage Nonvolatile Memory Applications

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