A cross‐sectional transmission electron microscopy study of silicide growth kinetics in the Cr/(100)Si system at 425 °C
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.333399
Reference9 articles.
1. Growth Kinetics Observed in the Formation of Metal Silicides on Silicon
2. Behavior and Influence of Oxygen in Chromium Silicide Formation
3. Metallurgical and electrical properties of chromium silicon interfaces
4. Formation kinetics of CrSi2 films on Si substrates with and without interposed Pd2Si layer
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4. The fabrication of nickel and chromium silicide using an XeCl excimer laser;Journal of Crystal Growth;1996-07
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