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Valley splitting in strained silicon quantum wells

Published:2004-01-05 Issue:1 Volume:84 Page:115-117
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Boykin Timothy B.,Klimeck Gerhard,Eriksson M. A.,Friesen Mark,Coppersmith S. N.,von Allmen Paul,Oyafuso Fabiano,Lee Seungwon

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1637718

Reference26 articles.

1. Practical design and simulation of silicon-based quantum-dot qubits

2. Practical design and simulation of silicon-based quantum-dot qubits

3. A. M. Tyryshkin, S. A. Lyon, A. V. Astashkin, and A. M. Raitsimring, preprint cond-mat/0303006.

4. Exchange in Silicon-Based Quantum Computer Architecture

5. Observation of the fractional quantum Hall effect in Si/SiGe heterostructures

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1. Atomistic Compositional Details and Their Importance for Spin Qubits in Isotope‐Purified Silicon Quantum Wells;Advanced Science;2024-09-11

2. Valley-Free Silicon Fins Caused by Shear Strain;Physical Review Letters;2024-07-17

3. Coupling conduction-band valleys in SiGe heterostructures via shear strain and Ge concentration oscillations;npj Quantum Information;2024-05-31

4. Modeling Si/SiGe quantum dot variability induced by interface disorder reconstructed from multiperspective microscopy;npj Quantum Information;2024-03-27

5. Valley splitting depending on the size and location of a silicon quantum dot;Physical Review Materials;2024-03-19

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