Stability of NiSi2and CoSi2in contact with their free metal
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94815
Reference10 articles.
1. Dissociation of PtSi, NiSi and PdGe in presence of Pt, Ni and Pd films, respectively
2. Thermal stability and growth kinetics of Co2Si and CoSi in thin‐film reactions
3. Lateral diffusion of Ni and Si through Ni2Si in Ni/Si couples
4. Selective growth of metal‐rich silicide of near‐noble metals
5. Growth kinetics of planar binary diffusion couples: ’’Thin‐film case’’ versus ’’bulk cases’’
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1. Effect of high temperature deposition on CoSi2 phase formation;Journal of Applied Physics;2013-06-21
2. Schottky Barrier Characteristics of Cobalt–Nickel Silicide/n-Si Junctions for Scaled-Si CMOS Applications;IEEE Transactions on Electron Devices;2008-09
3. Characteristics of DC magnetron sputtered ternary cobalt–nickel silicide thin films for ultra shallow junction devices;Microelectronic Engineering;2008-03
4. Prediction of silicide formation and stability using heats of formation;Thin Solid Films;1996-12
5. Growth kinetics of phases in solid-state diffusion couples;Physica Status Solidi (a);1995-12-16
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