Impact of superlinear defect-related recombination on LED performance at low injection
Author:
Affiliation:
1. Davidson College, Davidson, North Carolina 28035, USA
2. Institute of Semiconductors, Chinese Academy of Science, Beijing 100086, China
3. University of North Carolina at Charlotte, Charlotte, North Carolina 28223, USA
Funder
National Key Research and Development Program of China
Army Research Office
Guangzhou Science and Technology Program key projects
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.5089125
Reference31 articles.
1. Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies
2. Efficiency droop in light-emitting diodes: Challenges and countermeasures
3. Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop
4. Onset of the Efficiency Droop in GaInN Quantum Well Light-Emitting Diodes under Photoluminescence and Electroluminescence Excitation
5. Evaluation of radiative efficiency in InGaN blue-violet laser-diode structures using electroluminescence characteristics
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