Photoluminescence and Raman study of compensation effects in Mg-doped GaN epilayers-Reference-Cited by-同舟云学术

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Photoluminescence and Raman study of compensation effects in Mg-doped GaN epilayers

Published:1998-11-15 Issue:10 Volume:84 Page:5828-5830
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Eckey L.,von Gfug U.,Holst J.,Hoffmann A.,Kaschner A.,Siegle H.,Thomsen C.,Schineller B.,Heime K.,Heuken M.,Schön O.,Beccard R.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.368853

Reference11 articles.

1. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

2. Microstructural study of Mg-doped p-type GaN: Correlation between high-resolution electron microscopy and Raman spectroscopy

3. Influence of magnesium doping on the structural properties of GaN layers

4. Quantitative determination of hexagonal minority phase in cubic GaN using Raman spectroscopy

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