Diffused homojunction lead‐sulfide‐selenide diodes with 140 K laser operation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.90225
Reference7 articles.
1. Double‐heterostructure PbSnTe lasers grown by molecular‐beam epitaxy with cw operation up to 114 K
2. Double‐heterostructure PbS‐PbSe‐PbS lasers with cw operation up to 120 K
3. Homojunction lead-tin-telluride diode lasers with increased frequency tuning range
4. Optical Properties of SomePb1−xSnxTeAlloys Determined from Infrared Plasma Reflectivity Measurements
5. Ingot‐nucleated Pb1−xSnxTe diode lasers
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1. Lead Selenide Nanowires Prepared by Lithographically Patterned Nanowire Electrodeposition;The Journal of Physical Chemistry Letters;2010-03-08
2. Properties of liquid‐phase epitaxy grown Pb1−xSnxTe homostructure diode lasers with Ga‐doped cladding layer;Journal of Applied Physics;1988-11
3. An Overview of Tunable Diode Laser Technology Development;Tunable Solid State Lasers for Remote Sensing;1985
4. Chapter 3 Semiconductor Lasers with Wavelengths Exceeding 2 μm;Semiconductors and Semimetals;1985
5. Cleaved‐coupled‐cavity lead‐salt diode lasers;Applied Physics Letters;1984-06-15
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