Nanometer scale study of HfO2 trap states using single electron tunneling force spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3580767
Reference28 articles.
1. High dielectric constant gate oxides for metal oxide Si transistors
2. Mechanism of Electron Trapping and Characteristics of Traps in $\hbox{HfO}_{2}$ Gate Stacks
3. Pulsed $I_{d}$– $V_{g}$ Methodology and Its Application to Electron-Trapping Characterization and Defect Density Profiling
4. Origin of Vt Instabilities in High-$k$Dielectrics Jahn–Teller Effect or Oxygen Vacancies
5. Reliability Challenges for CMOS Technology Qualifications With Hafnium Oxide/Titanium Nitride Gate Stacks
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1. Review—Beyond the Highs and Lows: A Perspective on the Future of Dielectrics Research for Nanoelectronic Devices;ECS Journal of Solid State Science and Technology;2019
2. Determination of optical constant and electrical properties of sputtering-derived HfTiON gate dielectrics;Journal of Alloys and Compounds;2015-10
3. Atomic-resolution single-spin magnetic resonance detection concept based on tunneling force microscopy;Physical Review B;2015-05-22
4. Electrical properties improvement of high-k HfO2 films by combination of C4F8 dual-frequency capacitively coupled plasmas treatment with thermal annealing;Applied Surface Science;2014-08
5. Detection of surface electronic defect states in low and high-k dielectrics using reflection electron energy loss spectroscopy;Journal of Materials Research;2013-10-15
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