TEMPERATURE AND COMPOSITIONAL DEPENDENCE OF LASER EMISSION IN Pb1−xSnxSe
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1652675
Reference5 articles.
1. DIODE LASERS OF Pb1−ySnySe AND Pb1−xSnxTe
2. Band Structure and Laser Action inPbxSn1−xTe
3. Inversion of Conduction and Valence Bands inPb1−xSnxSeAlloys
4. LONG‐WAVELENGTH INFRARED Pb1−xSnxTe DIODE LASERS
5. PbTe Debye-Waller Factors and Band-Gap Temperature Dependence
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2. Nernst-Ettingshausen effect at the trivial-nontrivial band ordering in topological crystalline insulator Pb1−xSnxSe;New Journal of Physics;2016-01-25
3. Band inversion and the topological phase transition in (Pb,Sn)Se;Physical Review B;2014-10-08
4. Bulk Signatures of Pressure-Induced Band Inversion and Topological Phase Transitions inPb1−xSnxSe;Physical Review Letters;2014-08-27
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