Strain relaxation in PbSnSe and PbSe/PbSnSe layers grown by liquid-phase epitaxy on (100)-oriented silicon
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Liquid phase epitaxy grown PbSnSeTe/PbSe double heterostructure diode lasers
2. TEMPERATURE AND COMPOSITIONAL DEPENDENCE OF LASER EMISSION IN Pb1−xSnxSe
3. Double heterostructure Pb1‐xSnxTe–PbTe lasers with cw operation at 77 K
4. LPE growth of crack-free PbSe layers on Si(100) using MBE-Grown PbSe/BaF2CaF2 buffer layers
5. MBE growth of PbSe/CaF2/Si(1 1 1) heterostructures
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5. Incubation of PbSe Thin Films in a Tin(II) Salt Aqueous Solution: Modification and Ion-Exchange Reactions;Journal of Materials Science & Technology;2015-08
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