Nanostructural and electronic properties of polytypes in InN nanocolumns
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4818517
Reference28 articles.
1. Handbook of Nitride Semiconductors and Devices
2. Properties of GaN Nanowires Grown by Molecular Beam Epitaxy
3. Inter-layer interactions and the origin of SiC polytypes
4. Electronic Band Structure of SiC Polytypes: A Discussion of Theory and Experiment
5. Artificially layered heteropolytypic structures based on SiC polytypes: molecular beam epitaxy, characterization and properties
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. (S)TEM methods contributions to improve the fabrication of InGaN thin films on Si, and InN nanostructures on flat Si and rough InGaN;Journal of Alloys and Compounds;2019-04
2. Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy;Journal of Applied Physics;2016-06-14
3. Nanostructure and strain in InGaN/GaN superlattices grown in GaN nanowires;Nanotechnology;2013-09-27
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