Al/Al2O3/InP MIS structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.90652
Reference12 articles.
1. The Mos/InP interface
2. Abstract: Electrical characteristics of the InP surface
3. InP/SiO2MIS structure
4. InP–SiO2 m.i.s. structure with reduced interface state density near conduction band
5. InP-Langmuir-film m.i.s. structures
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2. BaTiO3 as an insulating layer for InP-based metal-insulator–semiconductor structures;Materials Letters;2001-10
3. Growth and characterization of Al2O3 insulator gate on p-InP and p-Si by metallorganic chemical vapour deposition at low temperatures;Journal of Materials Science;1992-01-01
4. Effect of rapid thermal annealing on anodic oxides on InP;physica status solidi (a);1990-09-16
5. Properties of zinc‐phosphide junctions and interfaces;Journal of Applied Physics;1987-04-15
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