Continuous room‐temperature photopumped laser operation of modulation‐doped AlxGa1−xAs/GaAs superlattices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.92295
Reference8 articles.
1. Quantum-well heterostructure lasers
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3. The Use of Metal-Organics in the Preparation of Semiconductor Materials
4. Continuous 300 °K laser operation of single‐quantum‐well AlxGa1−xAs‐GaAs heterostructure diodes grown by metalorganic chemical vapor deposition
5. Continuous room‐temperature multiple‐quantum‐well AlxGa1−xAs‐GaAs injection lasers grown by metalorganic chemical vapor deposition
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1. Perspectives on the Development of Metalorganic Vapor Phase Epitaxy for III-V Optoelectronic Devices;IEEE Journal of Quantum Electronics;2022-08
2. Impurity-induced layer disordering of quantum-well heterostructures: discovery and prospects;IEEE Journal of Selected Topics in Quantum Electronics;1998
3. Semiconductor Superlattices: Order and Disorder;MRS Proceedings;1987
4. Characterization and kinetics of AlxGa1−xAs by organometallic-CVD;Progress in Crystal Growth and Characterization;1986-01
5. Stimulated emission of GaAs‐Al0.6Ga0.4As multiple quantum well structures grown by metalorganic chemical vapor deposition;Applied Physics Letters;1984-01
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