Raman monitoring of semiconductor growth
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356644
Reference11 articles.
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3. In SituInvestigation of Band Bending during Formation of GaAs-Ge Heterostructures
4. Observation of interface phonons by light scattering from epitaxial Sb monolayers on III-V semiconductors
5. Deposition of indium on Sb(111) single crystal: A low energy electron diffraction, Auger, and x‐ray photoelectron spectroscopy interface investigation
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